Role of molecular beam epitaxy parameters on InGaAs surface roughness
Document Type
Conference Proceeding
Publication Date
7-1-2001
Abstract
AFM image analysis of 12 nm thick In0.2Ga0.8As grown on GaAs demonstrated a very smooth surface with average rms of ∼3.5 Å. The rms value increased with In% at the same growth temperature. Within the temperature range of 410-440°C, there was no trend of rms change observed for InGaAs/GaAs. AFM images of 12 nm thick samples showed the initial formation of the InGaAs surface waves.
Publication Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Recommended Citation
Deng, X.,
Liu, W.,
Lin, M.,
&
Zhang, J.
(2001).
Role of molecular beam epitaxy parameters on InGaAs surface roughness.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,
19(4), 1558-1561.
http://doi.org/10.1116/1.1376386
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/11982
