Current rectification by as-grown chemical vapor deposited single-walled carbon nanotubes
Document Type
Conference Proceeding
Publication Date
11-10-2008
Abstract
Observation of diode-like current (I) - voltage (V) characteristics of switches fabricated from chemical vapor deposited (CVD) as-grown single-walled carbon nanotube (SWNT) bundles are presented. Atomic force microscopic analysis of the device structure and surface topology of SWNT suggest the observed rectification of current to possibly result from (a) cross-tube junctions, (b) a mixture of metallic and semiconducting tubes in the SWNT bundles, and/or (c) chirality change along a single tube. The exact mechanism underlying the observed rectification could not be established. The diode-like behavior of SWNT devices discovered in this research opens up new applications of SWNTs as nanoscale AC-DC converter.
Publication Title
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Recommended Citation
Mallick, G.,
Griep, M.,
Lastella, S.,
Sahoo, S.,
Hirsch, S.,
Ajayan, P.,
&
Karna, S.
(2008).
Current rectification by as-grown chemical vapor deposited single-walled carbon nanotubes.
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, 237-238.
http://doi.org/10.1109/NANO.2008.77
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10831