Modeling of electronic transport in metallic carbon nanotube interconnects
Document Type
Conference Proceeding
Publication Date
12-1-2010
Abstract
Metallic carbon nanotubes are being considered as a candidate for to potentially replace Copper as an interconnect material in future generation integrated circuits. In this paper we examine electronic transport behavior in metallic carbon nanotubes using a self consistent non equilibrium Green's function (NEGF) methodolgy including effects of electron phonon interactions Results show that conductivity is seen to decrease in the ballistic limit due to localized disorder effects even with a weak disorder potential. We were also able to show that optical phonons (LO/TO modes) are the dominant mechanisms that govern the mean free path of conduction. Our calculations show an excellent match with experiement. © 2009 IEEE.
Publication Title
Proceedings of the International Conference on Microelectronics, ICM
Recommended Citation
Parkash, V.,
&
Goel, A.
(2010).
Modeling of electronic transport in metallic carbon nanotube interconnects.
Proceedings of the International Conference on Microelectronics, ICM, 244-247.
http://doi.org/10.1109/ICM.2010.5696128
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10589