Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors
Document Type
Article
Publication Date
1-1-1993
Abstract
We have developed a computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs MODFET. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length, width and the gate metal resistivity have been studied. © 1993 IEEE
Publication Title
IEEE Transactions on Microwave Theory and Techniques
Recommended Citation
Goel, A.,
&
Xu, W.
(1993).
Modeling of Transverse Propagation Delays in the GaAs/AlGaAs Modulation Doped Heterojunction Field Effect Transistors.
IEEE Transactions on Microwave Theory and Techniques,
41(6), 1230-1232.
http://doi.org/10.1109/22.238551
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10210