Vacancy defects in photoexcited GaAs studied by positron two-dimensional angular correlation of annihilation radiation
Document Type
Article
Publication Date
1-1-1994
Abstract
The positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique has been coupled with optical excitation to study the native point defects in semi-insulating GaAs. The As vacancy was observed below ∼170 K when illuminated with 1.41±0.07 eV photons. The temperature dependence of the 2D-ACAR spectra, with and without illumination, was studied. Data were also collected at 25 K as a function of the intensity of infrared light. The 2D-ACAR spectra reflect the e+-e- pair momentum distribution at or near the vacancy and provides symmetry and electronic structure information, which can be used as a unique defect signature for the vacancy. © 1994 The American Physical Society.
Publication Title
Physical Review B
Recommended Citation
Peng, J.,
Lynn, K.,
Umlor, M.,
Keeble, D.,
&
Harshman, D.
(1994).
Vacancy defects in photoexcited GaAs studied by positron two-dimensional angular correlation of annihilation radiation.
Physical Review B,
50(15), 11247-11250.
http://doi.org/10.1103/PhysRevB.50.11247
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/10021