Document Type

Article

Publication Date

9-5-2018

Abstract

Industrial Czochralski silicon (Cz-Si) photovoltaic (PV) efficiencies have routinely reached >20% with the passivated emitter rear cell (PERC) design. Nanostructuring silicon (black-Si) by dry-etching decreases surface reflectance, allows diamond saw wafering, enhances metal gettering, and may prevent power conversion efficiency degradation under light exposure. Black-Si allows a potential for >20% PERC cells using cheaper multicrystalline silicon (mc-Si) materials, although dry-etching is widely considered too expensive for industrial application. This study analyzes this economic potential by comparing costs of standard texturized Cz-Si and black mc-Si PERC cells. Manufacturing sequences are divided into steps, and costs per unit power are individually calculated for all different steps. Baseline costs for each step are calculated and a sensitivity analysis run for a theoretical 1 GW/year manufacturing plant, combining data from literature and industry. The results show an increase in the overall cell processing costs between 15.8% and 25.1% due to the combination of black-Si etching and passivation by double-sided atomic layer deposition. Despite this increase, the cost per unit power of the overall PERC cell drops by 10.8%. This is a significant cost saving and thus energy policies are reviewed to overcome challenges to accelerating deployment of black mc-Si PERC across the PV industry.

Publisher's Statement

© 2018 by the authors. Article has been deposited here in compliance with the publisher's policy.

Publication Title

Energies

Creative Commons License

Creative Commons Attribution 4.0 License
This work is licensed under a Creative Commons Attribution 4.0 License.

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