Title
Properties of Al-doped zinc oxide and In-doped zinc oxide bilayer transparent conducting oxides for solar cell applications
Document Type
Article
Publication Date
7-2018
Abstract
Novel aluminum and indium doped zinc oxide (ZnO) bilayer transparent conducting oxide thin films was fabricated by simple sol-gel spin coating method and post-annealed at 500 °C for an hour under nitrogen ambient for solar cell applications. The structural, electrical and optical properties of both the as-deposited and annealed bilayer thin films were characterized. X-ray diffraction studies show a hexagonal wurtzite-type structure of ZnO with (0 0 2) orientation, which enhanced with annealing. In atomic force microscopy studies, minimum surface roughness was attained for Al-doped ZnO (AZO)/In-doped ZnO (IZO) bilayer TCO film compared to IZO/AZO bilayer film. The AZO/IZO film sheet resistance improved to 0.057 M ohm/square after post-annealing, while the single layer AZO film sheet resistance degraded upon annealing in nitrogen atmosphere. All the films had an average transmittance in the visible region over 96%.
Publication Title
Materials Letters
Recommended Citation
Murugesan, M.,
Arjunraj, D.,
Mayandi, J.,
Venkatachalapathy, V.,
&
Pearce, J. M.
(2018).
Properties of Al-doped zinc oxide and In-doped zinc oxide bilayer transparent conducting oxides for solar cell applications.
Materials Letters,
222, 50-53.
http://doi.org/10.1016/j.matlet.2018.03.097
Retrieved from: https://digitalcommons.mtu.edu/materials_fp/169
Publisher's Statement
© 2018 Elsevier B.V. All rights reserved. Publisher's version of record: https://doi.org/10.1016/j.matlet.2018.03.097