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Date of Award


Document Type

Campus Access Dissertation

Degree Name

Doctor of Philosophy in Environmental Engineering (PhD)

Administrative Home Department

Department of Materials Science and Engineering

Advisor 1

Yun Hang Hu

Committee Member 1

Jiann-Yang Hwang

Committee Member 2

Feng Zhao

Committee Member 3

Kazuya Tajiri


It is generally recognized that H2O adsorption on a porous material would inhibit H2 adsorption. However, Chapter 3 reports that stable H2O-functionalized ZIF-8(a representative MOF), which was obtained by the simple water treatment of ZIF-8 at ambient temperature, can increase its H2 adsorption heat from 5.2 to 10.1 kJ/mol. As a result, the reversible H2 capacity at ambient temperature increased by 77%.

A suitable isotherm equation for C2H2 adsorption on various MOFs has not been found. Chapter 4 demonstrates that Dubinin-Astakhov equation can be exploited as a general isotherm model to depict C2H2 adsorption on MOF-5, ZIF-8, HKUST-1, and MIL-53. Furthermore, it was found that the adsorption of C2H2 on the defected MIL-53 is stronger than that on MIL-53 without defection, reflected by adsorption-heat increase from 19.3 to 25.1 kJ/mol.

Chapter 5 finds that the adsorption of CO2 on the defected ZIF-8 is stronger than that on ZIF-8 without defection, reflected by initial adsorption-heat increase from 16.0 to 22.8 kJ/mol. As a result, the specific reversible CO2 capacity per surface area increased with increasing defects.

A novel strategy was developed to enhance the hydrophilicity on the external surface of ZIF-8 without reducing or blocking the internal pores in Chapter 6. A simple ball-milling approach combined with water treatment results in a significantly higher cell viability without compromising its hydroxyurea loading and release capacity.

It’s a challenge to build a memristor with odd-symmetric I–V features. In Chapter 7, a novel strategy, in which two same asymmetric switch components can be combined as a symmetric device, is reported to create an odd-symmetric memristor. Furthermore, with this strategy, the surface-sulphurization was performed on both sides of a Ag foil, leading to a Ag2S/Ag/Ag2S odd-symmetric memristor consisting of two asymmetric Ag2S/Ag memristive switches.

Chapter 8 demonstrate that 2H phase of bulk MoS2 possessed an ohmic feature, whereas 1T phase of exfoliated MoS2 nanosheets exhibited a unique memristive behaviour due to voltage-dependent resistance change. Furthermore, an ideal odd-symmetric memristor with odd-symmetric I–V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches anti-serially.