Title

Room temperature operational single electron transistor fabricated by focused ion beam deposition

Authors

P. Santosh Kumar Karre, Michigan Technological University
Paul Bergstrom, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

7-2007

Abstract

We present the fabrication and room temperature operation of single electron transistors using 8nm8nmtungsten islands deposited by focused ion beamdeposition technique. The tunnel junctions are fabricated using oxidation of tungsten in peracetic acid. Clear Coulomb oscillations, showing charging and discharging of the nanoislands, are seen at room temperature. The device consists of an array of tunnel junctions; the tunnel resistance of individual tunnel junction of the device is calculated to be as high as 25.13GΩ25.13GΩ. The effective capacitance of the array of tunnel junctions was found to be 0.499aF0.499aF, giving a charging energy of 160.6meV160.6meV.

Publisher's Statement

© 2007 American Institute of Physics. Publisher's version of record: http://dx.doi.org/10.1063/1.2761837

Publication Title

Journal of Applied Physics

Recommended Citation

Karre, P. S., & Bergstrom, P. (2007). Room temperature operational single electron transistor fabricated by focused ion beam deposition. Journal of Applied Physics, 102(2). http://doi.org/10.1063/1.2761837
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/1

Version

Publisher's PDF