Title

Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots

Authors

Chee Huei Lee, Michigan Technological University
Shengyong Qin, Oak Ridge National Laboratory
Madhusudan A. Savaikar, Michigan Technological University
Jiesheng Wang, Michigan Technological University
Boyi Hao, Michigan Technological UniversityFollow
Dongyan Zhang, Michigan Technological UniversityFollow
Douglas R. Banyai, Michigan Technological University
John A. Jaszczak, Michigan Technological UniversityFollow
Kendal W. Clark, Oak Ridge National Laboratory
Juan-Carlos Idrobo, Oak Ridge National Laboratory
An-Ping Li, Oak Ridge National Laboratory
Yoke Khin Yap, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

9-6-2013

Abstract

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Publisher's Statement

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Publisher's version of record: https://dx.doi.org/10.1002/adma.201301339

Publication Title

Advanced Materials

Recommended Citation

Lee, C. H., Qin, S., Savaikar, M. A., Wang, J., Hao, B., Zhang, D., Banyai, D. R., Jaszczak, J. A., Clark, K. W., Idrobo, J., Li, A., & Yap, Y. K. (2013). Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots. Advanced Materials, 25(33), 4544-4548. http://doi.org/10.1002/adma.201301339
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/29