Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor

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We report a first-principles quantum transport study in a single wall boron nitride nanotube sandwiched between a pair of gold electrodes. The non-equilibrium Green’s function approach, in which the electric field effect is explicitly included within a many body framework, is used to calculate the channel current, Isd , in the presence of a transverse gate field, Eg. The Eg is found to have a profound effect on the electronic current between the source and drain –revealing transistor behavior. The significant modulation in electronic current (ON–OFF current ratio of at ~18 at Vsd of 3 V) is attributed to the giant Stark shift caused by the gate field.

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© 2009 Elsevier B.V. All rights reserved. Publisher's version of record: https://doi.org/10.1016/j.cplett.2009.10.027

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Chemical Physics Letters