Title

Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor

Authors

Ranjit Pati, Michigan Technological UniversityFollow
Puspamitra Panigrahi, Michigan Technological University
Partha Pratim Pal, Michigan Technological University

Document Type

Article

Publication Date

11-2009

Abstract

We report a first-principles quantum transport study in a single wall boron nitride nanotube sandwiched between a pair of gold electrodes. The non-equilibrium Green’s function approach, in which the electric field effect is explicitly included within a many body framework, is used to calculate the channel current, I_sd , in the presence of a transverse gate field, E_g. The E_g is found to have a profound effect on the electronic current between the source and drain –revealing transistor behavior. The significant modulation in electronic current (ON–OFF current ratio of at ~18 at V_sd of 3 V) is attributed to the giant Stark shift caused by the gate field.

Publisher's Statement

© 2009 Elsevier B.V. All rights reserved. Publisher's version of record: https://doi.org/10.1016/j.cplett.2009.10.027

Publication Title

Chemical Physics Letters

Recommended Citation

Pati, R., Panigrahi, P., & Pal, P. P. (2009). Gate field induced electronic current modulation in a single wall boron nitride nanotube: Molecular scale field effect transistor. Chemical Physics Letters, 482(4-6), 312-315. http://doi.org/10.1016/j.cplett.2009.10.027
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/121