We propose an orbital-controlled model to explain the gate field induced switching of current in a semiconducting PbS-nanowire junction. A single-particle scattering formalism in conjunction with a posteriori density-functional approach involving a hybrid functional is used to study the electronic current; both first- and higher-order Stark effects are explicitly treated in our model. Our calculation reveals that after a threshold gate voltage, orbital mixing produces p components at the S atoms in the participating orbitals. This results in an interlayer orbital interaction that allows electrons to delocalize along the channel axis. As a consequence, a higher conductance state is found. A similar feature is also found in a PbSe nanowire junction, which suggests that this model can be used universally to explain the gate field induced switching of current in lead-chalcogenide nanowire junctions.
Physical Review B
Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction.
Physical Review B,
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