Title

Giant amplification of tunnel magnetoresistance in a molecular junction: Molecularspin-valve transistor

Authors

Kamal B. Dhungana, Michigan Technological University
Ranjit Pati, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

4-22-2014

Abstract

Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickelcontacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy

Publisher's Statement

© 2014 AIP Publishing LLC. Article deposited here in compliance with publisher policy. Publisher's version of record: https://doi.org/10.1063/1.4873396

Publication Title

Applied Physics Letters

Recommended Citation

Dhungana, K. B., & Pati, R. (2014). Giant amplification of tunnel magnetoresistance in a molecular junction: Molecularspin-valve transistor. Applied Physics Letters, 104(16). http://doi.org/10.1063/1.4873396
Retrieved from: https://digitalcommons.mtu.edu/physics-fp/107

Version

Publisher's PDF