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The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.
Michigan Technological University, Houghton, MI (US)
Certificate of Correction
Yap, Yoke Khin, "Room temperature tunneling switches and methods of making and using the same" (2017). Michigan Tech Patents. 136.