Title

On the relation of mechanical deformation and electrical properties of BN nanotubes

Document Type

Article

Publication Date

1-31-2011

Department

Department of Physics

Abstract

Using a novel in-situ scanning tunneling microcopy integrated into a 200Kv transmission electron microscopy, we have shown that boron nitride nanotubes (BNNTs) posses remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ∼460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via reducing the band gap.

Publisher's Statement

© Materials Research Society 2010. Publisher's version of record: https://doi.org/10.1557/PROC-1204-K17-03

Publication Title

MRS Proceedings Online

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