On the relation of mechanical deformation and electrical properties of BN nanotubes
Department of Physics
Using a novel in-situ scanning tunneling microcopy integrated into a 200Kv transmission electron microscopy, we have shown that boron nitride nanotubes (BNNTs) posses remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ∼460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via reducing the band gap.
MRS Proceedings Online
Ghassemi, H. M.,
Lee, C. H.,
Yap, Y. K.,
On the relation of mechanical deformation and electrical properties of BN nanotubes.
MRS Proceedings Online,
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/94