On the relation of mechanical deformation and electrical properties of BN nanotubes

Authors

Hessam Mir Shah Ghassemi, Michigan Technological University
Chee Huei Lee, Michigan Technological University
Yoke Khin Yap, Michigan Technological UniversityFollow
Reza Shahbazian-Yassar, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

1-31-2011

Department

Department of Physics

Abstract

Using a novel in-situ scanning tunneling microcopy integrated into a 200Kv transmission electron microscopy, we have shown that boron nitride nanotubes (BNNTs) posses remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ∼460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via reducing the band gap.

Publisher's Statement

© Materials Research Society 2010. Publisher's version of record: https://doi.org/10.1557/PROC-1204-K17-03

Publication Title

MRS Proceedings Online

Recommended Citation

Ghassemi, H. M., Lee, C. H., Yap, Y. K., & Shahbazian-Yassar, R. (2011). On the relation of mechanical deformation and electrical properties of BN nanotubes. MRS Proceedings Online, 1204. http://doi.org/10.1557/PROC-1204-K17-03
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/94