Title

Effects of annealing on the dark conductivity and photoconductivity of rf sputtered hydrogenated amorphous silicon

Document Type

Article

Publication Date

12-1-1984

Abstract

The dark conductivity and photoconductivity of rf sputtered hydrogenated amorphous silicon (a-Si:H) as a function of annealing temperature and hydrogen partial pressure are reported. Isochronal annealing to 350°C results in a decrease in dark conductivity and an increase in photoconductivity consistent with a reduction in the density of states in the pseudogap. Annealing above 350°C has the effect of sharply increasing the dark conductivity in more heavily hydrogenated samples and decreasing the photoconductivity. This behavior is associated with the generation of defect states due to hydrogen evolution. The results indicate that annealing rf sputtered a-Si:H below 350°C can lead to improved electrical properties.

Publication Title

Applied Physics Letters

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