Theoretical study of the group-IV antisite acceptor defects in CdGeAs < inf> 2
Document Type
Conference Proceeding
Publication Date
11-8-2004
Abstract
Native and impurity antisite point defects in CdGeAs 2 are studied here using an embedded quantum cluster model based on density functional theory. The calculated geometric relaxations and spin densities of the antisite defects considered here show a clear and distinct difference in the nature of native (i.e. [Ge As]) and impurity (i.e. [C As] and [Si As]) antisite defects in CdGeAs 2. For the native antisite acceptor, the hole appears to be delocalized in contrast to impurity antisites where the hole is mainly localized at the acceptor site. © 2004 American Institute of Physics.
Publication Title
Applied Physics Letters
Recommended Citation
Blanco, M.,
Costales, A.,
Luaña, V.,
&
Pandey, R.
(2004).
Theoretical study of the group-IV antisite acceptor defects in CdGeAs < inf> 2 .
Applied Physics Letters,
85(19), 4376-4378.
http://doi.org/10.1063/1.1818731
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/8839