Low temperature growth of boron nitride nanotubes on substrates
Department of Physics
High growth temperatures (>1100 °C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 °C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.
Yap, Y. K.,
Lu, J. G.,
Low temperature growth of boron nitride nanotubes on substrates.
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/79