Title

Low temperature growth of boron nitride nanotubes on substrates

Document Type

Article

Publication Date

11-12-2005

Department

Department of Physics

Abstract

High growth temperatures (>1100 °C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 °C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.

Publisher's Statement

© 2005 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/nl051859n

Publication Title

Nano Letters

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