Formation of nanoscale trenches and wires as a pathway to phase-separation in strained epitaxial Ge-Sn alloys
Document Type
Article
Publication Date
12-1-1999
Abstract
We report on the molecular beam epitaxial growth of Ge0.93Sn0.07 alloys on Ge (100). A strained planar Ge0.93Sn0.07 film forms at the initial stages, as observed and confirmed by AFM and X-ray analysis. Continued deposition leads to formation of 3D Sn islands, which initiates phase-separation in the strained GeSn thin film through a kinetic pathway that leaves behind a pattern of nanoscale trenches and wires that run along 〈100〉 directions. This morphological transition only happens in a certain range of temperature, thickness and composition. The morphological features observed in Ge0.93Sn0.07 films potentially offer a unique pathway for fabrication of nanostructures.
Publication Title
Thin Solid Films
Recommended Citation
Zhang, J.,
Deng, X.,
Swenson, D.,
Hackney, S.,
&
Krishnamurthy, M.
(1999).
Formation of nanoscale trenches and wires as a pathway to phase-separation in strained epitaxial Ge-Sn alloys.
Thin Solid Films,
357(1), 85-89.
http://doi.org/10.1016/S0040-6090(99)00481-2
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/7366