Title

Patterened growth of boron nitride nanotubes by catalytic chemical vapor deposition

Document Type

Article

Publication Date

1-13-2010

Department

Department of Physics

Abstract

For the first time, patterned growth of boron nitride nanotubes is achieved by catalytic chemical vapor deposition (CCVD) at 1200 °C using MgO, Ni, or Fe as the catalysts, and an Al2O3 diffusion barrier as underlayer. The as-grown BNNTs are clean, vertically aligned, and have high crystallinity. Near band-edge absorption ∼6.0 eV is detected, without significant sub-band absorption centers. Electronic transport measurement confirms that these BNNTs are perfect insulators, applicable for future deep-UV photoelectronic devices and high-power electronics.

Publisher's Statement

© 2010 American Chemical Society. Publisher's version of record: https://doi.org/10.1021/cm903287u

Publication Title

Chemistry of Materials

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