Growth of p-type Si nanotubes by catalytic plasma treatments

Authors

Ming Xie, Michigan Technological University
Jiesheng Wang, Michigan Technological University
Zhiyong Fan, University of California, Irvine
Yoke Khin Yap, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

7-28-2008

Department

Department of Physics

Abstract

We have demonstrated a new technique to transform bulk materials into one-dimensional nanostructures. We have shown that p-type Si nanotubes (SiNTs) can be grown by a simple dual RF plasma treatment of p-type Si substrates at 500 °C. These SiNTs have diameters of ~50–80 nm with tubular wall thickness of ~10–15 nm. The use of Cu vapor and reactive plasma has enabled the growth of these SiNTs instead of Si nanowires.

Publisher's Statement

©2008 IOP Publishing Ltd. Publisher's version of record: https://doi.org/10.1088/0957-4484/19/36/365609

Publication Title

Nanotechnolgoy

Recommended Citation

Xie, M., Wang, J., Fan, Z., & Yap, Y. K. (2008). Growth of p-type Si nanotubes by catalytic plasma treatments. Nanotechnolgoy, 19(36). http://doi.org/10.1088/0957-4484/19/36/365609
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/66