Electrical and structural characterization of Co and Ni silicide contacts to silicon

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Cobalt and nickel were deposited on n-type silicon (〈111〉 oriented, 0.9-1.0 Ω cm, 4.5 μm epilayer) by e-beam deposition process. These metal contacts were annealed in a quartz furnace (N2 gas atmosphere) for different temperatures and times to form low-resistivity silicides. The most consistent and lowest sheet resistence values were obtained for samples annealed at 800°C for 240 min. These sheet resistance values were 0.3-0.4 Ω □ for Co Si samples and 0.2-0.7 Ω □ for Ni Si samples. X-ray diffraction and Auger electron spectroscopy (AES) data analysis did not conclusively show the presence of the disilicide. The AES data showed some intersting similarities and differences indicating possible discrete for mation of the disilicides in that had low sheet resistance values. © 1991.

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Applied Surface Science