Title
Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes
Document Type
Article
Publication Date
1-1-1991
Abstract
This paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed in that the spin-dependent enhancement of free-carrier capture processes can occur directly at a paramagnetic deep defect without the need for other defects nearby. This model incorporates singlet-triplet mechanisms of existing models, but is shown to be consistent with new experimental results which indicate the absence of any adjacent trapping centers. © 1991.
Publication Title
Solid State Electronics
Recommended Citation
Rong, F.,
Buchwald, W.,
Poindexter, E.,
Warren, W.,
&
Keeble, D.
(1991).
Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes.
Solid State Electronics,
34(8), 835-841.
http://doi.org/10.1016/0038-1101(91)90229-R
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5497