NLO properties of Si(OH) < inf> 4 and Ge(OH) < inf> 4 clusters
The NLO properties in terms of static and frequency-dependent hyperpolarizabilities of Si(OH)4 and Ge(OH)4 clusters are determined with an aim to understand the microscopic NLO behavior of silica. The calculated results reveal that the cluster configuration induced by the presence of a defect plays a significant role in determining the non-linear response of these clusters. In addition, instant ionization of the cluster introduces a noticeable increase in the value of second hyperpolarizability, γ. © 1994.
Chemical Physics Letters
NLO properties of Si(OH) < inf> 4 and Ge(OH) < inf> 4 clusters.
Chemical Physics Letters,
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