Measurement of the grain boundary diffusion of In in Ni bicrystals by the SIMS technique
The diffusivity of indium as an impurity along grain boundaries in nickel bicrystals of known orientation has been measured using secondary ion mass spectrometry (SIMS). The values obtained are very large and comparable in magnitude to those observed by Hillert and Purdy. and by Smidoda. Gottschalk and Gleiter for migrating interfaces. These results along with other data from the literature lead to a different interpretation of the migrating interface results than that presented by original authors. It is suggested that the high observed interfacial diffusivities may be the cause rather than the result of the observed interfacial migration. © 1982.
R Hintz, M.,
Measurement of the grain boundary diffusion of In in Ni bicrystals by the SIMS technique.
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