How r-plane Al2O3 surface modifications impact the growth of epitaxial (001) CeO2 thin films
Document Type
Article
Publication Date
6-25-2009
Department
Department of Materials Science and Engineering
Abstract
We present evidence that it is the presence or absence of atomic terraces with a specific crystallographic orientation on the (102) Al 2O 3 surface that promotes growth of single-crystal (001) CeO 2 films over polycrystalline (111) CeO 2 films. The CeO 2 film nucleates so that the [010] and [100] directions of the film align parallel and perpendicular to the terrace edges. In the absence of terraces, multidomain (111) CeO 2 films result in which the in-plane orientation of the two domains are rotated by 85.71°, so that a [110] CeO 2 direction aligns parallel to either the [2̄21] or [2̄4̄1] Al 2O 3 direction.
Publication Title
Journal of Electronic Materials
Recommended Citation
Sunder, M.,
&
Moran, P.
(2009).
How r-plane Al2O3 surface modifications impact the growth of epitaxial (001) CeO2 thin films.
Journal of Electronic Materials,
38(9), 1931-1937.
http://doi.org/10.1007/s11664-009-0864-6
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/5080