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Department of Physics


Quantum dots, quantum rings, and, most recently, quantum dot-ring nanostructures have been studied for their interesting potential applications in nanoelectronic applications. Here, the electronic properties of a dot-ring hetero-nanostructure consisting of a graphene ring and graphene dot with a hexagonal boron nitride (h-BN) ring serving as barrier between ring and dot are investigated using density functional theory. Analysis of the character of the wave functions near the Fermi level and of the charge distribution of this dot-ring structure and calculations of the quantum transport properties find asymmetry in the conductance resonances leading to asymmetric I–V characteristics which can be modified by applying a negative voltage potential to the central graphene dot.

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© 2018 The Author(s). Published by IOP Publishing Ltd. Publisher’s version of record:

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Journal of Physics Communications

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Creative Commons Attribution 3.0 License
This work is licensed under a Creative Commons Attribution 3.0 License.


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