Title

Determination of the transverse propagation delays in single‐gate GaAs Mesfets

Document Type

Article

Publication Date

1-1-1988

Abstract

A computer‐efficient algorithm for the calculation of the transverse propagation delays in single‐gate GaAs MESFETs is presented. Electrode parasitic capacitances and the electrode contact and metallization resistances have been included in addition to the internal elements in the MESFET. The technique can be used for MESFETs with submicron gate lengths as well. Copyright © 1988 Wiley Periodicals, Inc., A Wiley Company

Publication Title

Microwave and Optical Technology Letters

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