Determination of the transverse propagation delays in single‐gate GaAs Mesfets

Authors

A. K. Goel, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

4-1988

Department

Department of Electrical and Computer Engineering

Abstract

A computer‐efficient algorithm for the calculation of the transverse propagation delays in single‐gate GaAs MESFETs is presented. Electrode parasitic capacitances and the electrode contact and metallization resistances have been included in addition to the internal elements in the MESFET. The technique can be used for MESFETs with submicron gate lengths as well.

Publisher's Statement

Copyright © 1988 Wiley Periodicals, Inc., A Wiley Company. Publisher’s version of record: https://doi.org/10.1002/mop.4650010203

Publication Title

Microwave and Optical Technology Letters

Recommended Citation

Goel, A. (1988). Determination of the transverse propagation delays in single‐gate GaAs Mesfets. Microwave and Optical Technology Letters, 1(2), 51-53. http://doi.org/10.1002/mop.4650010203
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3784