Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET
The gate characteristics (ID-VGS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simulated over a wide range of operating temperature (300-600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the drain current and the transconductance are temperature independent. Such a point is known as the zero-temperature coefficient (ZTC) bias point. The drain-current ZTC points are identified in both the linear and saturation regions. The transconductance ZTC exists only in the saturation region.
Microwave and Optical Technology Letters
Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET.
Microwave and Optical Technology Letters,
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