Microwave dielectric characterization of silicon dioxide
The microwave dielectric properties of silicon dioxide at frequencies of 915 and 2450 MHz were characterized in the temperature range of 24 to approximately 1000°C using the cavity perturbation technique. It is shown that the relative dielectric constant of silicon dioxide at both frequencies remains almost unchanged below 500°C, above which there is a slight increase of 2%. The relative dielectric loss factor of silicon dioxide exhibits a strong temperature dependence above 500°C and increases by approximately 7 and 5 times at 915 and 2450 MHz, respectively. The substantial increase in the relative dielectric loss factor is mainly attributed to the enhanced dielectric polarization and accelerated electrical transport in silicon dioxide at elevated temperatures.
TMS Annual Meeting
Microwave dielectric characterization of silicon dioxide.
TMS Annual Meeting, 389-395.
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