Microwave dielectric characterization of silicon dioxide
Document Type
Conference Proceeding
Publication Date
1-31-2013
Department
Department of Materials Science and Engineering
Abstract
The microwave dielectric properties of silicon dioxide at frequencies of 915 and 2450 MHz were characterized in the temperature range of 24 to approximately 1000°C using the cavity perturbation technique. It is shown that the relative dielectric constant of silicon dioxide at both frequencies remains almost unchanged below 500°C, above which there is a slight increase of 2%. The relative dielectric loss factor of silicon dioxide exhibits a strong temperature dependence above 500°C and increases by approximately 7 and 5 times at 915 and 2450 MHz, respectively. The substantial increase in the relative dielectric loss factor is mainly attributed to the enhanced dielectric polarization and accelerated electrical transport in silicon dioxide at elevated temperatures.
Publication Title
TMS Annual Meeting
ISBN
9781118605646
Recommended Citation
Peng, Z.,
Hwang, J.,
Kim, B.,
Andriese, M.,
&
Wang, X.
(2013).
Microwave dielectric characterization of silicon dioxide.
TMS Annual Meeting, 389-395.
http://doi.org/10.1002/9781118659045.ch45
Retrieved from: https://digitalcommons.mtu.edu/michigantech-p/3407