Altering critical depinning current via domain wall pile-up in magnetic nanowires
Department of Materials Science and Engineering
© 2015 Elsevier B.V. All rights reserved. An important role of domain wall pile-up in current-driven domain wall depinning in magnetic nanowires is revealed using micromagnetic simulations. It is found that the critical current for domain wall depinning can be substantially reduced and conveniently tuned by controlling domain wall number in the pile-up at pinning site, in analogy to dislocation pile-up responsible for Hall-Petch effect in mechanical strength. Domain wall pinning and depinning at an s-shape bend is considered, and the effects of curvature and current crowding in magnetic circuit on domain wall behaviors are discussed.
Journal of Magnetism and Magnetic Materials
Geng, L. D.,
Jin, Y. M.
Altering critical depinning current via domain wall pile-up in magnetic nanowires.
Journal of Magnetism and Magnetic Materials,
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