Self-assembly of silicon nanotubes

Document Type

Article

Publication Date

2007

Department

Department of Physics

Abstract

The growth of silicon nanotubes (SiNTs) by a dual-RF-plasma treatment technique is reported here. These SiNTs are vertically aligned and self-assembled from Si substrates at 500 degree Celsius by the use of Cu catalysts. Their diameters are ∼50 to 80 nm with tubular wall thickness of ∼10-15nm. Cu vapors were found partially filled inside the SiNTs. This is a novel technique that can convert bulk materials into their nanostructures.

Publisher's Statement

© Materials Research Society 2008. Publisher's version of record: https://doi.org/10.1557/PROC-1057-II13-02

Publication Title

MRS Proceedings Online

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