Self-assembly of silicon nanotubes
Department of Physics
The growth of silicon nanotubes (SiNTs) by a dual-RF-plasma treatment technique is reported here. These SiNTs are vertically aligned and self-assembled from Si substrates at 500 degree Celsius by the use of Cu catalysts. Their diameters are ∼50 to 80 nm with tubular wall thickness of ∼10-15nm. Cu vapors were found partially filled inside the SiNTs. This is a novel technique that can convert bulk materials into their nanostructures.
MRS Proceedings Online
Lee, C. H.,
Yap, Y. K.
Self-assembly of silicon nanotubes.
MRS Proceedings Online,
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