Optimization of Protocrystalline Silicon p-Type Layers for Amorphous Silicon n-i-p Solar Cells, G. M. Ferreira, Chi Chen, R. J. Koval, Joshua M. Pearce, C. R. Wronski, R. W. Collins
Joshua M. Pearce

Absence of Carrier Recombination Associated With the Defect Pool Model in Intrinsic Amorphous Silicon Layers: Evidence from Current-Voltage Characteristics on p-i-n and n-i-p Solar Cells, J. Deng, Joshua M. Pearce, R. J. Koval, V. Vlahos, R. W. Collins, C. R. Wronskia
Joshua M. Pearce

Evolution of Microstructure and Phase in Amorphous, Protocrystalline, and Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry, R. W. Collins, A. S. Ferlauto, G. M. Ferreira, Chi Chen, Joohyun Koh, R. J. Koval, Joshua M. Pearce, C. R. Wronski
Joshua M. Pearce

Maximization of the Open Circuit Voltage for Hydrogenated Amorphous Silicon n–i–p Solar Cells by Incorporation of Protocrystalline Silicon P-Type Layers, R. J. Koval, Chi Chen, G. M. Ferreira, A. S. Ferlauto, Joshua M. Pearce, P. I. Rovira, C. R. Wronski, R. W. Collins
Joshua M. Pearce

Mobility Gap Profiles in Si:H Intrinsic Layers Prepared by H2 Dilution of SiH4: Effects on the performance of p-i-n Solar Cells, R. J. Koval, A. S. Ferlauto, Joshua M. Pearce, R. W. Collins, C. R. Wronski
Joshua M. Pearce