Title

Theoretical study of sequential oxidation of clusters of gallium oxide: Ga₃O_n (n: 4–8)

Authors

Gowtham S, Michigan Technological UniversityFollow
Aurora Costales, Universidad de Oviedo
Ravindra Pandey, Michigan Technological UniversityFollow

Document Type

Article

Publication Date

10-5-2006

Abstract

We report the results of a theoretical study of sequential oxidation of gallium oxide clusters from Ga₃O₄ to Ga₃O₈. These results, based on density functional theory calculations, find the ground state of the neutral clusters to be in the lowest spin state with nearly the same binding energy of 3.5 eV per atom. Electron affinity, ionization potential and HOMO–LUMO gap values of these oxygen-rich clusters show an oscillatory trend which may be due to the fact that sequential oxidation as well as addition (and removal) of an electron leads to significant changes in the geometry of the respective neutral clusters.

Publisher's Statement

© 2006 Elsevier B.V. Publisher's version of record: https://doi.org/10.1016/j.cplett.2006.09.105

Publication Title

Chemical Physics Letters

Recommended Citation

S, G., Costales, A., & Pandey, R. (2006). Theoretical study of sequential oxidation of clusters of gallium oxide: Ga₃O_n (n: 4–8). Chemical Physics Letters, 431(4-6), 358-363. http://doi.org/10.1016/j.cplett.2006.09.105
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