Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots

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One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

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© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Publisher's version of record: https://dx.doi.org/10.1002/adma.201301339

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Advanced Materials