Title

Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots

Document Type

Article

Publication Date

9-6-2013

Abstract

One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.

Publisher's Statement

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Publisher's version of record: https://dx.doi.org/10.1002/adma.201301339

Publication Title

Advanced Materials