Title

Room temperature tunneling switches and methods of making and using the same

Inventors

Yoke Khin Yap, Michigan Technological UniversityFollow

Files

Abstract

The tunneling channel of a field effect transistor comprising a plurality of tunneling elements contacting a channel substrate. Applying a source-drain voltage of greater than a turn-on voltage produces a source-drain current of greater than about 10 pA. Applying a source-drain voltage of less than a turn-on voltage produces a source-drain current of less than about 10 pA. The turn-on voltage at room temperature is between about 0.1V and about 40V.

Patent Number

US 9,825,154 B2

Assignee

Michigan Technological University, Houghton, MI (US)

Application Number

14/359,818

Date Filed

11-28-2012

Certificate of Correction

No

Issue Date

11-21-2017

Disciplines

Physics

Comments

For the most up-to-date information about this patent, including the availability of Certificates of Correction, be sure to check the United States Patent and Trademark Office's free, publicly accessible database: Patent Public Search https://ppubs.uspto.gov/pubwebapp/static/pages/landing.html

Recommended Citation

Yap, Yoke Khin, "Room temperature tunneling switches and methods of making and using the same" (2017). Michigan Tech Patents. 136.
https://digitalcommons.mtu.edu/patents/136