New flexible channels for room temperature tunneling field effect transistors

Boyi Hao, Michigan Technological University
Anjana Asthana, Michigan Technological University
Paniz Khanmohammadi, Michigan Technological University
Paul Bergstrom, Michigan Technological University
Douglas R. Banyai, Michigan Technological University
Madhusudan A. Savaikar, Michigan Technological University
John Jaszczak, Michigan Technological University
Yoke Khin Yap, Michigan Technological University

Publisher's version of record: https://dx.doi.org/10.1038/srep20293

Abstract

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we report that iron (Fe) quantum dots functionalized boron nitride nanotubes (QDs-BNNTs) can be used as the flexible tunneling channels of TFETs at room temperatures. The electrical insulating BNNTs are used as the one-dimensional (1D) substrates to confine the uniform formation of Fe QDs on their surface as the flexible tunneling channel. Consistent semiconductor-like transport behaviors under various bending conditions are detected by scanning tunneling spectroscopy in a transmission electron microscopy system (in-situ STM-TEM). As suggested by computer simulation, the uniform distribution of Fe QDs enable an averaging effect on the possible electron tunneling pathways, which is responsible for the consistent transport properties that are not sensitive to bending