Title

High-resistive tunnel junctions for room-temperature-operating single-electron transistors fabricated using chemical oxidation of Tungsten nanoparticles

Authors

Prasanjit Santosh Karre, Michigan Technological University
Daw Don Cheam, Michigan Technological University
Manoranjan Acharya, Michigan Technological University
Paul L. Bergstrom, Michigan Technological UniversityFollow

Document Type

Book Chapter

Publication Date

2012

Publisher's Statement

Publisher's version of record: https://doi.org/10.1201/b15035-14

Publication Title

Nanoelectronic Device Applications Handbook

Recommended Citation

Karre, P. S., Cheam, D. D., Acharya, M., & Bergstrom, P. L. (2012). High-resistive tunnel junctions for room-temperature-operating single-electron transistors fabricated using chemical oxidation of Tungsten nanoparticles. Nanoelectronic Device Applications Handbook. http://doi.org/10.1201/b15035-14
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/42