Mass production of room temperature single electron transistors using step & flash imprint lithography and lift-Off technique
We report the use of step & flash imprint lithography reverse tone (SFIL-RTM) and liftoff technique to fabricate sub-100 nm metal nano-wires as the electrodes for room temperature single electron transistors (RT-SET). The optimized process flow was performed on approximately 300 imprints, for a total of 714,000 devices. Each imprinted device contains drain/source/gate electrodes. Multiple electrode geometries were designed to explore the impact of device parameters. Following electrode formation, Tungsten quantum dots (QD) were formed using a novel focus ion beam (FIB) deposition technique, resulting in room temperature single electron transistor (RT-SET) devices. The RT-SET devices are tested using a Keithley 4200-SCS semiconductor parametric analyzer.
2008 8th IEEE Conference on Nanotechnology
Cheam, D. D., Karre, P. S., Palard, M., & Bergstrom, P. L. (2008). Mass production of room temperature single electron transistors using step & flash imprint lithography and lift-Off technique. 2008 8th IEEE Conference on Nanotechnology, (). http://dx.doi.org/10.1109/NANO.2008.58