Realization of Nano-Wires in Quartz using focused ion beam and ICP/RIE etching process for single electron transistor fabrication
The fabrication of sub-50 nm features with existing lithographic techniques is a technological challenge. Here we present the results for a fabricated nano-structure in quartz which can be potentially used for the large scale fabrication of single electron transistor (SET) devices using ultra-violet nano-imprint lithography (UV-NIL). The fabrication process was developed using focused ion beam (FIB) etching and inductively coupled plasma reactive ion etching (ICP/RIE). The results demonstrate the realization of quartz stamp with required nano-structures for the mass production of SET devices. SET devices could be integrated into nano-scaled systems incorporating vital functions like nano-sensing, data storage and communication will provide revolutionary capabilities.
2008 8th IEEE Conference on Nanotechnology
Karre, P. S., Cheam, D. D., & Bergstrom, P. L. (2008). Realization of Nano-Wires in Quartz using focused ion beam and ICP/RIE etching process for single electron transistor fabrication. 2008 8th IEEE Conference on Nanotechnology, (). http://dx.doi.org/10.1109/NANO.2008.57