Title

Realization of Nano-Wires in Quartz using focused ion beam and ICP/RIE etching process for single electron transistor fabrication

Authors

Prasanjit Santosh Karre, Michigan Technological University
Daw Don Cheam, Michigan Technological University
Paul L. Bergstrom, Michigan Technological UniversityFollow

Document Type

Conference Paper/Presentation

Publication Date

8-2008

Abstract

The fabrication of sub-50 nm features with existing lithographic techniques is a technological challenge. Here we present the results for a fabricated nano-structure in quartz which can be potentially used for the large scale fabrication of single electron transistor (SET) devices using ultra-violet nano-imprint lithography (UV-NIL). The fabrication process was developed using focused ion beam (FIB) etching and inductively coupled plasma reactive ion etching (ICP/RIE). The results demonstrate the realization of quartz stamp with required nano-structures for the mass production of SET devices. SET devices could be integrated into nano-scaled systems incorporating vital functions like nano-sensing, data storage and communication will provide revolutionary capabilities.

Publisher's Statement

Copyright © 2008, IEEE. Publisher's version of record: https://doi.org/10.1109/NANO.2008.57

Publication Title

2008 8th IEEE Conference on Nanotechnology

Recommended Citation

Karre, P. S., Cheam, D. D., & Bergstrom, P. L. (2008). Realization of Nano-Wires in Quartz using focused ion beam and ICP/RIE etching process for single electron transistor fabrication. 2008 8th IEEE Conference on Nanotechnology, 171-174. http://doi.org/10.1109/NANO.2008.57
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