Title

Characterization of silicon nitride films for a silicon nanowire-based biosensor

Authors

Thomas M. Daunais, Michigan Technological University
Daw Don Cheam, Michigan Technological University
Paul L. Bergstrom, Michigan Technological UniversityFollow
Craig FriedrichFollow

Document Type

Conference Paper/Presentation

Publication Date

8-2011

Abstract

We report the exploration of silicon nitride thin films prepared by low-pressure chemical vapor deposition (LPCVD) and by radio frequency (RF) sputter deposition utilized in the top down fabrication of sub-70nm silicon nanowires for biochemical sensing with functionalization. A series of experiments were performed to characterize the suitability of the films in the overall fabrication of the nanowires. It was observed that the sputtered silicon nitride had to be thicker than the LPCVD silicon nitride to serve as a sufficient masking layer, as expected. However, the higher density LPCVD film required a longer etch duration. Through a series of chemical etching, oxidation, and ellipsometric measurements, the investigators conclude that the sputtered nitride film serves as a more effective barrier film for top down nanowire fabrication.

Publisher's Statement

Copyright © 2011, IEEE. Publisher's version of record: https://doi.org/10.1109/NANO.2011.6144608

Publication Title

2011 11th IEEE International Conference on Nanotechnology

Recommended Citation

Daunais, T. M., Cheam, D. D., Bergstrom, P. L., & Friedrich, C. (2011). Characterization of silicon nitride films for a silicon nanowire-based biosensor. 2011 11th IEEE International Conference on Nanotechnology, 625-629. http://doi.org/10.1109/NANO.2011.6144608
Retrieved from: https://digitalcommons.mtu.edu/ece_fp/27